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HYG017N10NS1TA N-Channel Enhancement Mode MOSFET manufactured by HOOYI

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₹ 400.00
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HYG017N10NS1TA N-Channel Enhancement Mode MOSFET manufactured by HOOYI

HYG017N10NS1TA N-Channel Enhancement Mode MOSFET manufactured by HOOYI

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Key Specifications
  • Drain-to-Source Voltage : 100V
  • Continuous Drain Current : 330A
  • Drain-Source On-Resistance : 1.6 mΩ 
  • Package Type: TOLL (TO-Leadless surface-mount package)
  • Testing: 100% avalanche tested, reliable and rugged design
  • Compliance: Halogen-free and RoHS compliant
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HYG017N10NS1TA N-Channel Enhancement Mode MOSFET manufactured by HOOYI
HYG017N10NS1TA N-Channel Enhancement Mode MOSFET manufactured by HOOYI
₹ 400.00