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K2718 N-channel power MOSFET Package: TO-220 / TO-220F, Drain-Source Voltage -900 V, Continuous Drain Current - 2.5 A

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K2718 N-channel power MOSFET Package: TO-220 / TO-220F, Drain-Source Voltage -900 V, Continuous Drain Current - 2.5 A

K2718 N-channel power MOSFET Package: TO-220 / TO-220F, Drain-Source Voltage -900 V, Continuous Drain Current - 2.5 A

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K2718 N-channel power MOSFET Package: TO-220 / TO-220F, Drain-Source Voltage "-900" V, Continuous Drain Current - 2.5 A
The 2SK2718 (frequently marked as K2718) is a high-voltage, silicon N-channel power MOSFET manufactured by Toshiba, designed using their π-MOSIII technology. It is built for high-speed power switching applications, including DC-DC converters and motor drive systems.
Key Specifications
  • Drain-Source Voltage : 900 V (Note: This is a positive absolute maximum rating, not negative).
  • Continuous Drain Current : 2.5 A 
  •  Pulsed Drain Current : 7.5 A.  
  • Static Drain-Source On-State Resistance : 5.6 Ω
  • Gate Threshold Voltage : 2.0 V to 4.0 V
  • Maximum Power Dissipation : 40 W.
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Drain-Source Voltage 900 V
Continuous Drain Current 2.5 A
K2718 N-channel power MOSFET Package: TO-220 / TO-220F, Drain-Source Voltage -900 V, Continuous Drain Current - 2.5 A
K2718 N-channel power MOSFET Package: TO-220 / TO-220F, Drain-Source Voltage -900 V, Continuous Drain Current - 2.5 A
₹ 120.00